Field effect on positron diffusion in semi-insulating GaAs.
نویسندگان
چکیده
منابع مشابه
Vacancies and Dominant Electrically Active Defects in Bulk Semi-Insulating GaAs
Positron Annihilation techniques have been used to investigate two important defects that occur naturally in semi-insulating (SI) Gallium arsenide. The growth and assessment of SI GaAs and the application of PA to defect analysis of this important material are reported.
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EL2 deep-level transient study in semi-insulating GaAs using positron-lifetime spectroscopy
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Emission characteristics of photoconductive antennas based on low-temperature-grown GaAs and semi-insulating GaAs.
Terahertz radiation was generated with several designs of photoconductive antennas (three dipoles, a bow tie, and a coplanar strip line) fabricated on low-temperature-grown (LT) GaAs and semi-insulating (SI) GaAs, and the emission properties of the photoconductive antennas were compared with each other. The radiation spectrum of each antenna was characterized with the photoconductive sampling t...
متن کاملElectric field distributions in a molecular-beam epitaxy GaO•83 Alo.17 As/ GaAs/ GaAs structure using photoreflectance
We have studied the photorefiectance (PR) spectra from a molecular-beam epitaxially (MBE) grown heterostructure consisting of 200 nm of G!lo83 Alo 17 As, a 800-nm GaAs buffer layer on a semi-insulating (81) (100) (LEC) GaAs substrate. By varying both the pump beam wavelength and modulation frequency we are able to identify the component layers, their quality, and the quality of the various inte...
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عنوان ژورنال:
- Physical review. B, Condensed matter
دوره 54 3 شماره
صفحات -
تاریخ انتشار 1996